BLF278 VHF POWER MOSFET

FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.