5pcs IRF520 IRF520N N-Channel IR Power MOSFET Transistor TO-220 Arduino

FEATURES Dynamic dV/dt Rating  Repetitive Avalanche Rated  175 °C Operating Temperature  Fast Switching  Ease of Paralleling  Simple Drive Requirements  Compliant to RoHS Directive 2002/95/EC 9.2A, 100V  rDS(ON) = 0.270Ω SOA is Power Dissipation Limited  Single Pulse Avalanche Energy Rated  Nanosecond Switching Speeds  Linear Transfer Characteristics  High Input Impedance   DESCRIPTION Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.   This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a spe