5pcs IRF520 IRF520N N-Channel IR Power MOSFET Transistor TO-220 Arduino

FEATURES Dynamic dV/dt Rating  Repetitive Avalanche Rated  175 °C Operating Temperature  Fast Switching  Ease of Paralleling  Simple Drive Requirements  Compliant to RoHS Directive 2002/95/EC 9.2A, 100V  rDS(ON) = 0.270Ω SOA is Power Dissipation Limited  Single Pulse Avalanche Energy Rated  Nanosecond Switching Speeds  Linear Transfer Characteristics  High Input Impedance   DESCRIPTION Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.   This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.   Package Included 5pcs IRF520N TO-220 N-Channel IR Power MOSFET Transistor