Monolayer Graphene on 285 nm SiO2 Wafer

Monolayer graphene on 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating. Properties of Graphene Film: The thickness and quality of our graphene films is controlled by Raman Spectroscopy.  The graphene coverage of this product is about 95% The graphene film is continuous, with occasional holes and cracks Organic and PMMA residues can be observed The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation Sheet Resistance: 660-1,500 Ω/square Raman Spectrum of Single-Layer Graphene on SiO2 Our graphene films are predominantly single-layer graphene (more than 90%) with occasional small multilayer islands (approximately 10%). Properties of Silicon/Silicon Dioxide Wafers: Oxide Thickness: 285 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 Ω⋅cm Type/Dopant: P/Boron Orientation: <100> Front Surface: Polished Back Surface: Etched RCA cleaned Applications: Graphene electronics and tra