Multilayer Graphene on 285 nm Silicon Dioxide Wafer

Multilayer CVD-grown graphene transferred onto 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.    Properties of Graphene Film:  The thickness and quality of our graphene films is controlled by Raman Spectroscopy The graphene coverage of this product is about 95% The graphene film is continuous, with occasional holes and cracks The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation Sheet Resistance: 660-1,500 Ω/square   Optical Image of Multilayer Graphene on SiO2 The graphene grown on nickel film is multilayer and is not uniform. It looks like a patchwork whereas the “patches” have different thicknesses. The thickness of the film varies from 1 to 7 layers, with an average of 4. The graphene layers within the same patch are aligned relative to each other (there is a graphitic AB-staking order). The size of the patches is about 3-10 microns.   Properties of Silicon/Silicon Dioxide Wafers: Oxide Thick