Two Layers of CVD Graphene Film on SiO2/Si Wafer

Two layers of CVD graphene film on SiO2/Si wafer  Properties of Graphene Film: Two layers of single layer CVD graphene films are transferred onto 285 nm p-doped SiO2/Si wafer Size: 1cmx1cm; 4 pack Each graphene film is transferred consecutively onto the wafer The thickness and quality of our graphene film is controlled by Raman Spectroscopy The graphene coverage of this product is about 98% The graphene film is continuous, with minor holes and organic residues Each graphene film is predominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers) Each graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation There is no A-B stacking order. The graphene films are randomly oriented with respect to each other Sheet Resistance: 215-700 Ω/square   Properties of Silicon/Silicon Dioxide Wafers: Oxide Thickness: 285 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 ohm-cm Type/Dopant: