1N914B 1N914 Small Signal Diode Switching

Description: The 1N914B is a silicon epitaxial Switching Diode with compression bond construction. Included: 1N914B This item features: Compression Bond Construction Package (DO-35) Low Current Leakage Marking: Cathode Band and Type Number Operating Temperature: -55OC to +150OC Storage Temperature: -55O C to +150O C Maximum Thermal Resistance; 300O C/W Junction To Ambient Repetitive Reverse Voltage Vrrm Max: 100V Forward Current If(AV): 200mA Forward Voltage VF Max: 1V Reverse Recovery Time trr Max: 4ns Forward Surge Current Ifsm Max: 4A Condition: New and Authentic Component(s) - 1N914B Silicon epitaxial Switching Diode with compression bond construction. Friendly Note: Be mindful of the many, inexpensive, counterfeits available on the market. General details: We are expanding on a daily basis. If you do not see the part, or quantity of the part, you are looking for, please, let us know. We will do our best to accommodate you.