
N-Channel MOSFET
Condition: New Brand: ONSEMI MPN: FQD12N20LTM MPN Xref:FQD12N20LTM N-channel MOSFET with a drain-source voltage of 200V and a drain current of 5.7A. Features a power dissipation of 55W and a gate-source voltage of -20V. Package includes 2500 pieces in a TO-252 case. Current - Continuous Drain (Id) @ 25?C 9A (Tc) Drain to Source Voltage (Vdss) 200 V Drive Voltage (Max Rds On, Min Rds On) 5V, 10V FET Feature - FET Type N-Channel Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V Lead Free Status / RoHS Status RoHS Compliant Manufacturer Part Number FQD12N20LTM Manufacturer Standard Lead Time 48 Weeks Mounting Type Surface Mount Operating Temperature -55?C ~ 150?C (TJ) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging Reel Power Dissipation (Max) 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V Series QFET Standard Package 2,500 Supplier Device Package TO-252, (D-Pak) Technology Q