512kByte FRAM NVRAM Module Fujitsu MB85RS4MT | RAK15006

Description The RAK15006 FRAM module features the Fujitsu MB85RS4M storage chip. With this low power non-volatile RAM you can secure your settings and collect data from power outages without the limitation of write cycles as known by other NVRAM technologies. With a data retention of 10 years and 10 trillion write cycles, it outperforms any EEPROM or Flash storage devices. Its capacity of 512 kByte is sufficient for many applications. Features Temperature range:-40℃ to +85℃ SPI compatible digital interface, supports 40 MHz Operating power supply current 2.6 mA (Typ @40 MHz) Standby current 50 μA (Typ) 524288 words × 8 bits High Reliability: Read/write endurance: 1,000,000,000,000 /byte Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C) Module size: 10 x 10mm Documentation RAK15006 Overview