MDpicts

for contactless and destruction free temperature dependent measurement of minority carrier lifetime, LBIC and electrical characterization of bulk and interface trap levels of semiconductors Si | compound semiconductors | oxides | wide bandgap materials | perovskites | epitaxial layers [CdTe | HgCdTe | HgCdSe |InP | ZnS | SiC | GaAs | GaN | Ge]   Fundamental Research & Development on Semiconductor Materials Sensitivity: highest sensitivity for electrical defect characterizationTemperature range: liquid nitrogen (77 K) up to 500 K. Optional: liquid helium (4 K) or higher temperaturesRange of decay constants: 20 ns to several msContamination determination: measurement of fundamental trap level properties: activation energy and capture cross section of traps, temperature and injection dependent lifetime measurementsRepeatability: > 99%, Measurement time: < 60 minutes. Liquid nitrogen consumption: 2 l/runFlexibility: select from different wavelengths from 365 nm up to 1480 nm f