MF008400 - SEMI MF84 - Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe

 This Test Method  covers the measurement of the resistivity of silicon wafers with an in-line four-point probe. This Test Method describes a procedure that enables inter-laboratory comparisons of the room temperature resistivity of silicon wafers. The precision that can be expected depends on both the resistivity of the wafer and on the homogeneity of the wafer. Round-robin tests have been conducted to establish the expected precision for measurements on p-type wafers with room temperature (23°C) resistivity between 0.0008 Ω·cm and 2000 Ω·cm and on n-type wafers with room temperature (23°C) resistivity between 0.0008 Ω·cm and 6000 Ω·cm.This Test Method is intended for use on single crystals of silicon in the form of circular wafers with a diameter greater than 16 mm (0.625 in.) and a thickness less than 1.6 mm (0.0625 in.). Geometrical correction factors required for these measurements are available in tabulated form.  Procedures for preparing the specimen, for measuring its size, and