MF065700 - SEMI MF657 - Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning

This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on April 25, 2007. It was available at www.semi.org in June 2007. Originally published by ASTM International as ASTM F 657-80; previously published July 2005.   Warp and thickness variation of silicon wafers can significantly affect the yield of semiconductor device processing. Knowledge of these characteristics can help the supplier and customer determine if the dimensional characteristics of a particular wafer satisfy given geometrical requirements. Changes in wafer warp during processing can adversely affect subsequent handling and processing steps This test method is suitable for measuring the warp and TTV of silicon wafers used in semiconductor device processing in the as-sliced, lapped, or polished condition and for monitoring thermal and mechanical effects on the warp of silicon wafers during device processing. Thi