3D00200 - SEMI 3D2 - Specification for Glass Carrier Wafers for 3DS-IC Applications

NOTICE: This Document was reapproved with minor editorial changes.   This Specification is intended to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure glass carrier wafers to be used in a 3DS-IC process. This Specification describes dimensional, thermal, and wafer preparation characteristics for glass starting material that will be used as carrier wafers in a temporary bonded state.   This Specification describes glass carrier wafers with nominal diameters of 200 mm and 300 mm, and a thickness of 700 µm, although the wafer diameter and thickness required may vary due to process and functional variation. Such variations shall be clarified in the purchasing order or in the contract.   Methods of measurements suitable for determining the characteristics in the specifications are indicated.   Referenced SEMI Standards (purchase separately) SEMI 3D12 — Guide for Measuring Flatness and Shape of Low Stiffness Wafers SEMI E119 —