M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers

　This Specification covers two groups of substrate requirements for monocrystalline high-purity gallium arsenide wafers used in semiconductor and electronic device manufacture. Dimensional and crystallographic orientation characteristics and limits on surface defects are the only standardized properties set forth below.　A complete purchase specification may require that additional physical, electrical, and bulk properties be defined. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.　This Specification is directed specifically to gallium arsenide wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find this Specification helpful in defining their requirements. Subordinate Standards (included):SEMI M9.1-0813 (Withdrawn 0822) — Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for El