M05500 - SEMI M55 - Specification for Polished Monocrystalline Silicon Carbide Wafers

These specifications cover substrate requirements for monocrystalline high-purity silicon carbide wafers of crystallographic polytype 6H and 4H used in semiconductor and electronic device manufacturing. A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented. These specifications are directed specifically to silicon carbide wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find these specifications helpful in defining their requirements. Referenced SEMI Standards (purchase separately) SEMI M1 — Specification for Polished Single Crystal Silicon Wafers SEMI M59 — Terminology for Silico