M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers

This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www.semi.org April 1999; to be published June 1999.   This document provides a method to measure etch pit density (EPD) in low dislocation density GaAs wafers. 　Referenced SEMI StandardsNone.