M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry

Reduction of surface metal contamination below a concentration in accordance with the ITRS road map is a key issue for silicon wafer quality for most of the leading-edge technology applications. This Document provides a guide for a high-sensitivity measurement of trace metal contamination on the surface of a semiconductor grade silicon wafer by using inductively coupled plasma mass spectrometry (ICP-MS). 　 This Guide describes the procedure for trace metal measurement, including the metal impurity collection method from a silicon wafer surface, scanning solution composition, and its optimization. In particularly, the procedure of the collection method is described in detail because it influences the reliability of measurement data and reproducibility of each facility. 　 This Guide describes methods for the measurement of trace metal contamination on a silicon wafer surface. The decomposition of silicon oxide on silicon wafer, the collection of trace metal contamination from a wafer sur