MF139000 - SEMI MF1390 - Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning

 This Test Method is suitable for measuring the bow and warp of wafers used in semiconductor device processing in the as-sliced, lapped, etched, polished, epitaxial or other layer condition and for monitoring thermal and mechanical effects on the bow and warp of wafers during device processing.This Test Method covers a noncontacting, nondestructive procedure to determine the bow and warp of clean, dry semiconductor wafers. This Test Method employs a two-probe system that examines both external surfaces of the wafer simultaneously. The Test Method is applicable to wafers 50 mm or larger in diameter, and approximately 100 µm and larger in thickness, independent of thickness variation and surface finish, and of gravitationally induced wafer distortion. This Test Method is not intended to measure the flatness of either exposed silicon surface. Bow and warp are measures of the distortion of the median surface of the wafer. This Test Method measures bow and warp of a wafer corrected for mechanical forces applied during the test. Therefore, the procedure described gives the unconstrained value of bow and warp. This Test Method includes several methods for canceling gravity-induced deflection which could otherwise alter the shape of the wafer. Referenced SEMI Standards (purchase separately)SEMI M1 — Specification for Polished Single Crystal Silicon WafersSEMI M20 — Practice for Establishing a Wafer Coordinate SystemSEMI M59 — Terminology for Silicon TechnologySEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning Revision HistorySEMI MF1390-0218 (Reapproved 1023)SEMI MF1390-0218 (technical revision)SEMI MF1390-1014 (technical revision)SEMI MF1390-0707 (Reapproved 0512)SEMI MF1390-0707 (technical revision)SEMI MF1390-1104 (technical revision)SEMI MF1390-0704 (technical revision)SEMI MF1390-02 (first SEMI publication)