MF139000 - SEMI MF1390 - Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning

 This Test Method is suitable for measuring the bow and warp of wafers used in semiconductor device processing in the as-sliced, lapped, etched, polished, epitaxial or other layer condition and for monitoring thermal and mechanical effects on the bow and warp of wafers during device processing.This Test Method covers a noncontacting, nondestructive procedure to determine the bow and warp of clean, dry semiconductor wafers. This Test Method employs a two-probe system that examines both external surfaces of the wafer simultaneously. The Test Method is applicable to wafers 50 mm or larger in diameter, and approximately 100 µm and larger in thickness, independent of thickness variation and surface finish, and of gravitationally induced wafer distortion. This Test Method is not intended to measure the flatness of either exposed silicon surface. Bow and warp are measures of the distortion of the median surface of the wafer. This Test Method measures bow and warp of a wafer corrected for mech